The following graph shows measured IV characteristic of nMOS and pMOS. The drain current is normalized by the gate width. Relevant parameters for this transistor are: Gate width: 1 um (a) Based on the IV curve, which one of the following values would most likely be the threshold voltage of the nMOS? (1) VT=0.7 V; (2) VT=0.25 V; (3) VT -0.4 V; (4)

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The following graph shows measured IV characteristic of nMOS and pMOS. The drain current is normalized by the gate width. Relevant parameters for this transistor are: Gate width: 1 um (a) Based on the IV curve, which one of the following values would most likely be the threshold voltage of the nMOS? (1) VT=0.7 V; (2) VT=0.25 V; (3) VT -0.4 V; (4) VT=0 V; 1.20 PMOS NMOS 1.00 0.80 0.60 0.40 0.20 0.00 V=-0.7V lp (mA/?m) V = 0,7V V=0.6V V=-0.6V V=-0.5V V?=0.5V V=-0.4V V?=0.4V -0.7 -0.5 -0.3 -0.1 0.1 0.3 0.5 0.7 VDs (V) (b) Is the pMOSFET an enhancement-mode or a depletion-mode transistor? (c) Are these devices long-channel or short-channel transistors? Explain.

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