(Solved): The energy band diagram for an MOS capacitor is sketched below. The semiconductor is silicon at 30 ...

The energy band diagram for an MOS capacitor is sketched below. The semiconductor is silicon at 300K and the insulator is SiO?. Assume that there is no charge at the oxide-semiconductor interface and that there is no metal-semiconductor work function difference. E 0.36 eV Ec EF 0.42 eV E? Ev EFM 0.7 eV X x = 0 W Given: The relative dielectric constants of Si and SiO? are 11.8 and 3.9, respectively The intrinsic carrier concentration of Si is n= 100 cm³ KT = 0.0259 eV at 300K, permittivity of free space &o= 8.85 × 10-¹4 F/cm Assume that the electrostatic potential in the silicon is zero as x ? ?. (a) Is the Si p-doped or n-doped? Determine the doping concentration. (b) What is the numerical value of the surface potential øs? (Be sure to include a sign.) (c) Is the semiconductor in the accumulation, flat-band, depletion, or inversion regime? Calculate the electron concentration at the surface of Si (x = 0). (d) What's the gate voltage VG applied? (e) What's the voltage across the oxide Apox? (f) What's the width of the depletion region, W? (g) Assume there is a sheet of positive "fixed charge" with a density of 5 x 10¹1/cm² at the oxide-semiconductor interface, calculate the threshold voltage shift due to the fixed charge. Sketch energy band diagram for the MOS capacitor at flat band condition (please specify the flatband voltage and lable Ec, Ev, and Ef)