(f) Fig. 1(f) shows the absorption coefficient of different semiconductor materials with incident wavelength. Choose a semiconductor device to be made of InAs. Explain what will happen to the performance of your designed semiconductor device if InAs is chosen as the material and the operating temperature of the device is reduced from 300K

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(f) Fig. 1(f) shows the absorption coefficient of different semiconductor materials
with incident wavelength.
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(f) Fig. 1(f) shows the absorption coefficient of different semiconductor materials with incident wavelength. Choose a semiconductor device to be made of InAs. Explain what will happen to the performance of your designed semiconductor device if InAs is chosen as the material and the operating temperature of the device is reduced from 300K to 77K. Optical absorption coefficient a (cm ¹) 105 104 10³ 10² 10¹ PbS InAs Xenon He 3 PbTe PbSe Xenon InSb (118 K) Cesium it 7 6 5 Wavelength A (um) Fig. 1(f) Bi,Te 8 300 K 77 K Xenon 10-1 10¹ 10² 10³ Light penetration depth 1/a (µm) ||

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