Devise a process flow for a p-type MOSFET in which a SiGe source and drain will be
grown by an epitaxial layer grow process by the deposition technique of your choice.
Use extensive drawings or schematics and make comments on the fabrication step to
each of the drawn steps. Use maximum of 20 step drawings or schematics with
comments accompanying each step no longer than 50 words. Your fabrication process

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must start trom the tollowing step:
and must end by fabricating the following MOSFET structure:

must start trom the tollowing step: and must end by fabricating the following MOSFET structure:

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