A silicon wafer, ( 150 mathrm{~mm} ) in diameter, is to be doped with ( mathrm{n} )-type dopants via ion-implantation, using phosphorous ions at ( 100 mathrm{keV} ). The ion implantation process has the following parameters: Dose: ( 5.100 times 10^{20} mathrm{~mm}^{-2} ) Standard deviation: ( 69.0 mathrm{~nm} ). Calculate the appro

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A silicon wafer,  ( 150  mathrm{~mm}  ) in diameter, is to be doped with  (  mathrm{n}  )-type dopants via ion-implantation, using phosphorous ions at  ( 100  mathrm{keV}  ). The ion implantation process has the following parameters: Dose:  ( 5.100  times 10^{20}  mathrm{~mm}^{-2}  ) Standard deviation:  ( 69.0  mathrm{~nm}  ). Calculate the approximate peak concentration of dopant due to the ion implantation process. Give your answer in  (  mathrm{mm}^{-3}  ) to 3 s.f.

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(Solved): A silicon wafer, \( 150 \mathrm{~mm} \) in diameter, is to be doped with \( \mathrm{n} \)-type dopa ...

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