(Solved): 2. A) Design a MOSFET circuit with the configuration shown in Figure below. The transistor paramete ...

2. A) Design a MOSFET circuit with the configuration shown in Figure below. The transistor parameters are $V_{TP}=-0.6\mathrm{V},k_p^{\prime }=50\mu \mathrm{A}/{\mathrm{V}}^2$, and $\lambda =0$. The circuit bias is $\pm 3\mathrm{V}$, the drain current is to be $0.2\mathrm{mA}$, the drain-tosource voltage is to be approximately $3\mathrm{V}$, and the voltage across $R_S$ is to be approximately equal to $V_{SG}$. In addition, the current through the bias resistors is to be no more than 10 percent of the drain current. (Hint: choose a reasonable value of width-to-length ratio for the transistor.) B) Confirm your design using multisim.